Thermophotovoltaic Energy Conversion With GaSb Lattice-Matched GaxIn1−xAsySb1−y Diodes

Residing on the experimentally available GaInAsSb alloys, thermophotovoltaic (TPV) energy conversion with GaSb lattice-matched GaInAsSb diodes has been systematically studied. It is shown that the dependence of the optimal diode structure and the resulting performances on its bandgap can be uniformly modeled by a quadratic function, and the desirable coefficients versus the evolution of radiator temperature can be further reasonably traced by a cubic function, providing thus an empirical method to rapidly yet flexibly obtain the proper GaInAsSb diode for the specific TPV application.