I. Introduction
As sub-10-nm technology becomes the mainstream in semiconductor products [1]–[3], increased process variation makes the circuit design more difficult. Specifically, as technology scales down, parasitic resistance and capacitance (RC) in transistors (TRs) increases and RC variation begins to have a significant effect on circuit performance [4], [5]. For successful development of a product, it is essential to accurately analyze the variation effect and the design of the circuit to be robust to this variation. Traditionally, variation analysis has been conducted by two methods: the Monte Carlo (MC) and worst case corner simulations [6]. MC simulation is statistically accurate but time-consuming, whereas worst case corner-based analysis is fast but introduces pessimism. Thus, more accurate corner model is demanded for achieving both fast analysis time and high accuracy.