The Minimum Specific on-Resistance of Semi-SJ Device

The minimum specific ON-resistance R
_ON,sp
of the semisuperjunction (semi-SJ) device is realized in this paper. Based on the similar SJ optimization method in our previous works, the minimum R
_ON,sp
of the semi-SJ is searched by optimizing both the semi-SJ and the N-buffer regions. The proposed design formulas give the optimized doping concentration NSJ of the semi-SJ region, doping concentration NB, and length L
_B
of the N-buffer region, respectively. As examples, 1000-and 1500-V semi-SJ devices are designed with the formulas. The calculated results are in a good agreement with the simulations. The comparisons between the simulations and the existing experiments demonstrate that the optimization in this paper realizes lower R
_ON,sp
under the same breakdown voltage V
_B
even with a shorter SJ length.