A Novel Double-RESURF SOI Lateral TIGBT With Self-Biased nMOS for Improved ${V}_{\text{CE(sat)}}$ – ${E}_{\text{off}}$ Tradeoff Relationship

A novel double-reduced surface field (RESURF) silicon-on-insulator(SOI) lateral trench insulatedgate bipolar transistor (LTIGBT) with self-biased nMOS is proposed and investigated by simulation. During the turn-on transient, the self-biased nMOS is turned-off, and the p-top region is floating, and therefore the conductivity modulation in the drift region on the emitter side can be enhanced to achieve a low on-state voltage (V
_CE(sat)
). During the turn-off transient, the self-biased nMOS is turned on, and the p-top region is connected to the emitter, which effectively reduces its turn-off loss (E
_OFF
). As a result, the proposed LTIGBT realizes superior V
_CE(sat)
- E
_OFF
tradeoff relationship than both the conventional SOI trench-gate lateral insulated-gate bipolar transistor (LIGBT) (LTIGBT-A) and the double-RESURF SOI trenchgate LIGBT (LTIGBT-B). Simulation results reveal that, with the identical E
_OFF
of 0.25 mJ/cm
²
, V
_CE(sat)
of the proposed LTIGBT is 1.08 V, which is 11.4% and 32.5% lower than those of LTIGBT-A and LTIGBT-B, respectively; with the identical V
_CE(sat)
of 1.1 V, E
_OFF
of the proposed one is 0.19 mJ/cm
²
, which is 70% and 89% lower than the other two, respectively. Furthermore, the proposed device exhibits a lower saturation current.