Radiation Analysis of N-Channel TGRC-MOSFET: An X-Ray Dosimeter

This paper reports the response of an N-channel transparent gate recessed channel (TGRC) metal-oxide-semiconductor field-effect transistor (MOSFET) to X-ray radiation in the 0.5-k-10-krad dose range after irradiation. TCAD simulations for the same have been done to estimate the threshold voltage shift in MOSFET with different radiation dosages. Models accounting for electron-hole pair generation and recombination are applied along with the trap/detrap model for an insulator as well as interface charging. An improvement of 1.11 mV/krad in radiation sensitivity has been found in increasing the oxide thickness from 2 to 6 nm. The results suggest that TGRC-MOSFET can be effectively used as an X-ray dosimeter in the sub-30-nm scale. Along with a signal amplification and processing circuit, this device can find an enormous applicability in clinical and space environments.