I. Introduction
Silicon carbide (SiC) is a well-suited candidate for harsh environments and finds applications in diverse fields ranging from automobiles to defense, renewable energy, and even space exploration. 4H-SiC is a wide bandgap semiconductor with low intrinsic carrier concentration that allows high-temperature operation, without worrying about leakage even at elevated temperatures [1]–[8]. Due to its mature substrate and fabrication technology, SiC is suitable for fabricating a range of devices and integrated circuits (ICs). The industry has long focused on developing and improving SiC devices, such as discrete power devices, though there now exists a growing interest toward developing integrated SiC electronics. Currently, the SiC devices, especially power devices and sensors, used in extreme environment applications are integrated with Si-based circuitry, which reduces the overall efficiency and reliability of the system and necessitates the need for expensive and bulky cooling systems [7]. In contrast, owing to its high thermal conductivity and low intrinsic carrier concentration, the use of SiC in such applications can overcome these challenges [1]–[8]. As a result, substantial research is now geared toward designing SiC-based circuit technologies that can potentially be used as control circuitry for harsh environment electronics. With the advent of SiC devices (which are commercially available) and the advanced research into SiC ICs [2]–[5], [8]–[21], the next big leap for SiC-based electronics is the development of memory architecture, which is the motivation behind this paper.