High Thermoelectric Action in Vacuum Deposited Indium Alloyed Chalcogenide Thin Films: InxSe100-x

Chalcogenide glasses own high degree of disorder which is a significant parameter to improve the performance of thermoelectric materials. Here, we study the electrical and thermoelectric properties of vacuum deposited InxSe100-x (x = 6, 12, 18, and 24) chalcogenide thin films in the temperature range from 300 to 450 K. The values of dc conductivity have been determined and were found to increase from 0.029 × 10
^-10
Ω
^-1
· m
^-1
(x = 6) to 173.546 × 10
^-10
Ω
^-1
· m
^-1
(x = 24). Thin film samples for x = 6, 12, 18, and 24 have shown high values of the Seebeck coefficient. The obtained results for the dc conductivity and the Seebeck coefficient may lead to a high value of the power factor. Looking into the results, it is expected that x = 6, 12, 18, and 24 samples have high figure of merit and may be explored as new thermoelectric materials.