Effect of Temperature on the Performance of Triple-Gate Junctionless Transistors

The device transport parameters (subthreshold slope, low-field mobility, series resistance, and threshold voltage) of n-channel triple-gate junctionless transistors are investigated in the temperature range 298-398 K. The temperature dependence of these parameters is analyzed to clarify the mechanisms responsible for the impact of temperature on the device performance. Based on analytical empirical expressions capturing their temperature dependence, our analytical compact model can predict the transfer and output characteristics at elevated temperatures with good accuracy.