Evaluation by Simulation of AlGaN/GaN Schottky Barrier Diode (SBD) With Anode-Via Vertical Field Plate Structure

This paper introduces the anode-via vertical field plate Schottky barrier diode (AVFP-SBD) structure as an enhanced breakdown voltage AlGaN/GaN SBD, using the 2-D ATLAS Silvaco software. The breakdown voltage enhancement is achieved by integration of the lateral field plate (LFP) and vertical field plate (VFP) into the AlGaN/GaN SBD. The simulation results indicate that the VFP not only provide a uniform electric field along the channel, but also distributes the internal electric field on the side of the anode evenly. We show that the proposed structure significantly enhances the breakdown voltage of the conventional AlGaN/GaN diodes, i.e., from -246 to -354 V. Moreover, optimal breakdown voltage of -2301 V is achieved using the SBD with anode-via both LFP and VFP, through an integration of the LFP into the AVFP-SBD. Such breakdown voltage enhancement is achieved without any deterioration in the forward characteristics of the diode.