Numerical Analysis of 3-D Scaling Rules on a 1.2-kV Trench Clustered IGBT

The 3-D scaling rules for the cathode cells and threshold voltages of a 1.2-kV trench clustered insulated gate bipolar transistors (TCIGBTs) are investigated using calibrated models in Synopsys Sentaurus TCAD tools. Scaling down results in an enhancement of current gain of the inherent thyristor action which reduces the forward voltage drop even more than that of a scaled trench insulated gate bipolar transistors (TIGBT). For identical switching losses, at a scaling factor k = 3, the forward voltage drop is reduced by 20% at 300 K and 30% at 400 K when compared to the conventional TCIGBT (k = 1). Most importantly, despite its lower conduction losses than an equivalent TIGBT, a scaled TCIGBT structure can maintain its short-circuit capability, due to the additional scaling principle applied to the n-well and p-well regions, maintaining the self-clamping feature. Thus, TCIGBT is a more efficient chip-for-chip, reliable replacement of a TIGBT for energy savings in applications.