An Investigation of High-Temperature (to 300 °C) Safe-Operating-Area in a High-Voltage Complementary SiGe on SOI Technology

Safe-operating-area (SOA) in a high-voltage complementary silicon-germanium (SiGe) (= n-p-n + p-n-p) on silicon-on-insulator (SOI) technology is investigated from 24 °C to 300 °C. Three key reliability degradation regions are identified, including: 1) high-current; 2) mixed-mode; and 3) high-power. The degradation mechanisms, which are operative, including Auger damage, mixed-mode damage, and electrothermal runaway as well as their temperature dependences are identified. Mixed-mode damage exhibits a strong negative temperature coefficient for both n-p-n and p-n-p SiGe heterojunction bipolar transistors (HBTs) up to 300 °C, which leads to an increase in the SOA from a high-voltage perspective. Electrothermal boundaries are also explored by finding J
_C,crit
and V
_CB,crit
across the J
_C
-V
_CB
plane up to 300 °C. Both n-p-n and p-n-p SiGe HBTs show an increase in the SOA for the electrothermal boundary as temperature increases. High-current-induced damage, on the other hand, exhibits a positive temperature coefficient, which implies that high current drive should carefully be considered when using SiGe HBT circuits operated in a high-temperature environment. However, at very high temperatures (>200°C), the high current damage processes show annealing properties, which implies that at sufficiently high temperatures, annealing can dominate over Auger damage and potentially extend the SOA of the technology.