Analytical Drain Current Model of 1-D Ballistic Schottky-Barrier Transistors

A new analytical model based on the Wentzel-Kramers-Brillouin approximation for MOSFET-like 1-D ballistic transistors with Schottky-Barrier contacts has been developed for the drain current. By using a proper approximation of both the Fermi-Dirac distribution function and transmission probability, an analytical solution for the Landauer integral was obtained, which overcomes the limitations of existing models and extends their applicability toward high bias voltages needed for analog applications. The simulations of transfer and output characteristics are found to be in agreement with the experimental data for sub-10-nm carbon-nanotube FETs.