Analysis of Short-Channel Effects in Junctionless DG MOSFETs

This brief investigates short-channel effects (SCEs) in junctionless (JL) double-gate (DG) MOSFETs analytically by solving the 2-D potential in subthreshold. Ids-Vg curves and Vt rolloff generated from the model are validated by 2-D numerical simulations (Technology Computer Aided Design). It is shown that the SCE of JL MOSFETs is inherently worse than that of undoped DG MOSFETs. The SCE worsens with increasing doping concentration in the channel.