I. Introduction
Bipolar transistors which have a fully depleted intrinsic collector can be used as high-voltage (HV) devices since they have increased values of breakdown voltages [1]–[7]. Furthermore, a base width modulation in such structures is suppressed allowing for aggressive scaling of the base layer, which results in a great tradeoff between common-emitter current gain ( and early voltage (, offering a good analog performance. A high-frequency performance is degraded, but devices working at the Jonhson’s limit are demonstrated [6].