Extraction of BEOL Contributions for Thermal Resistance in SiGe HBTs

In this brief, we propose a simple approach to extract the contribution of the back-end-of-line (BEOL) layers on the thermal resistance of heterojunction bipolar transistors (HBTs). A finite value of BEOL thermal resistance obtained following our approach confirms a non-negligible heat flow toward BEOL. The proposed extraction technique is validated with iterative solutions and measured data of silicon–germanium HBTs fabricated in the STMicroelectronics B9MW technology.