I. Introduction
By virtue of the wide bandgap, high-critical breakdown electrical field, and thermal conductivity, silicon carbide (SiC) has been well established as the most promising candidate for high-temperature and high-power applications [1]–[5]. In recent years, the performances of SiC MOSFETs have demonstrated remarkable improvements due to the huge advances in the developments of process technology and new structures [6]–[10]. Nevertheless, the current annual globe market for SiC MOSFETs is still at an early stage, and commercial SiC devices have not yet been proven perfectly reliable in end-user applications [11]–[14]. One of the most serious reliability issues is the device failure from unclamped-inductive-switching (UIS) impact. Because the SiC MOSFETs are usually used in the switching application, in this way, some types of unclamped inductive loads (the lumped or parasitic elements) will generate large drain inrush current and force the devices in reaching simultaneous high-current and high-voltage conditions during ON-state to OFF-state transient.