Physical Insights Into Electric Field Modulation in Dual- $k$ Spacer Asymmetric Underlap FinFET

In this paper, the performance of dual-k spacer asymmetric underlap FinFET (DKAU-FinFET) is analyzed. The significance of using dual-k spacers is illustrated considering the parasitic outer fringing capacitance. The study also presents physical insights into inversion charge modulation by dual-k spacers in DKAU-FinFETs. In addition, the proposed device structure is analyzed for analog, RF, and digital circuit performances. Based on the performance analysis, the use of optimum inner high-k spacer thickness is proposed for reliable device performance.