Simulation Study of an Injection Enhanced Insulated-Gate Bipolar Transistor With p-Base Schottky Contact

This paper proposes a new concept of Schottky contact insulated-gate bipolar transistor (SC-IGBT), which uses a top surface Schottky contact to the p-base as a hole barrier to enhance the conductivity modulation effect. TCAD simulation shows that the SC-IGBT offers a saturation voltage decrease of 19% or turn-OFF loss reduction of 46% when compared with a conventional field-stop IGBT. Furthermore, it potentially offers an alternative method of fabricating injection enhancement IGBTs, which is simpler than the existing buried n-type layer or narrow mesa trench structures.