I. Introduction
Ferroelectrics (FEs) have gained new technological and commercial interest from emerging computing applications where power availability is either severely constrained or unreliable. These include ultralow-power mobile computing systems, which require leakage current minimization for power gating, and energy harvesting (Radio Frequency Identification) systems, which require computational state backups to protect against power failures. Consequently, circuit complexity with FE components has grown beyond simple 1T–1C cells in FeRAM to include a wide variety of FE-nonvolatile latch and SRAM topologies [1]–[3].