Atomistic Modeling of Pocket Dopant Deactivation and Its Impact on $V_{\textrm {th}}$ Variation in Scaled Si Planar Devices Using an Atomistic Kinetic Monte Carlo Approach

An analysis of pocket dopant deactivation and its impact on V
_th
variation for scaled Si devices using an atomistic kinetic Monte Carlo approach are shown in this paper. B 5 keV, 5 × 10
¹³
/cm
²
+ As 1 keV, 1 × 10
¹⁵
/cm
²
implants were used for B pocket deactivation study. An effect of laser annealing (LA) before spike-Rapid Thermal Annealing (RTA) was investigated. In case of B pocket implant, a stable B cluster configuration is changed from B
₃
I (>1020 °C) to BI
₂
at spike-RTA temperature ~1020 °C. BI
₂
is a source of B pocket deactivation with lower temperature than 1020 °C. LA before low-temperature spike-RTA (<;1020 °C) is useful to improve B pocket activation. The V
_th
mismatch figure of merit extracted from Pelgrom plot (Avt) degradation in nFET is shown as spike-RTA temperature is reduced. LA before spike-RTA shows a better short channel effect with lower drain-induced barrier lowering in nFET. LA + spike-RTA at 1000 °C shows better Avt than spike-RTA-only. The difference of pocket deactivation is one of possible important reasons for the higher V
_th
mismatch for nFET than for pFET.