Novel Gate-All-Around High-Voltage Thin-Film Transistor With T-Shaped Metal Field Plate Design

A novel gate-all-around (GAA) high-voltage thin-film transistor (HVTFT) with the T-shaped metal field plate (MFP) design results in a high breakdown voltage (V
_BD
) of 119.9 V and a low specific ON-resistance (R
_SP
) of 8.4 mQ · cm
²
. This T-shaped MFP GAA HVTFT solves the V
_BD
-R
_SP
tradeoff problems and exhibits superior gate control performance, which leads to excellent electrical characteristics such as a better ON/OFF ratio of >10
¹⁰
and a lower subthreshold slope of 154.4 mV/decade than the conventional planar structure.