Study of the Characteristics of Solid Phase Crystallized Bridged-Grain Poly-Si TFTs

In this paper, bridged-grain (BG) poly-Si thin-film transistors (TFTs) were fabricated. The characteristics of BG poly-Si TFTs with different BG periods and implantation schemes were investigated. The poly-Si TFTs with optimized BG structures and doping schemes demonstrated greatly improved sub-threshold slope, threshold voltage, maximum field effect mobility, leakage current, and ON/OFF ratio.