Compact Model for Ultrathin Low Electron Effective Mass Double Gate MOSFET

We present a core compact model for undoped, high mobility, and low density of states materials in a double gate device architecture. Analytical equations for calculating current and charge are presented in a drift-diffusion compact modeling framework. This model accurately handles both Fermi-Dirac statistics and bias-dependent diffusivity. The results from analytical equations are validated against exact numerical charge and current integrations and device simulation.