Experimental Investigation of the Tunneling Injection Boosters for Enhanced $I_{ON}$ ETSOI Tunnel FET

We compare the performance of planar fully depleted silicon-on-insulator tunnel FETs (TFETs) with different tunneling boosters. The effectiveness of each of the following boosters is studied independently: low-bandgap channel or source-drain material as well as abrupt junction and ultrathin body. These boosters lead to an increase in the tunneling rate, and thus to enhanced ON current. The I
_ON
values of our devices vastly outperform literature results, paving the way for future CMOS-like TFET circuits.