Study on Dual Channel n-p-LDMOS Power Devices With Three Terminals

Two dual channel three-terminal transmission-gate-like n-p-lateral double-diffused metal oxide semiconductor (n-p-LDMOS) power devices with majorities of both types for conduction are proposed. Based on the method of generating a control signal for one of the gates inside the devices, each proposed n-p-LDMOS device only needs one gate control signal. One of the power devices can be used as an n-LDMOS device and the other can be used as a p-LDMOS device. The safe operating area is widened than the conventional n-LDMOS because of the compensation of electric flux density introduced by electron and hole currents. In addition, the specific ON-resistances of the new devices are reduced by ~ 20% and over 23% compared with that of the conventional n-LDMOS, respectively. The proposed power devices and their control methods are analyzed and verified by numerical simulations.