Vertically Stacked Nanosheets Tree-Type Reconfigurable Transistor With Improved ON-Current

In this article, a novel tree-type channel reconfigurable field-effect transistor (RFET) is proposed to obtain improved ON-state performance. Compared with the conventional nanosheet (NS) channel structure, an additional interbridge (IB) channel is vertically intersected in tree-type RFET. Geometry parameters of IB and NS, along with various gate dielectric materials with fixed EOT, are investigated in the point of threshold voltage (
${V}_{\text {TH}}$
) and on-state current (
${I}_{ {\mathrm {\scriptstyle{ON}}}}$
). When high-
${k}$
gate dielectric is adopted, the large cross-sectional area of IB will provide a better ON-state characteristic because of the larger tunneling area. Compared with the conventional NS RFET,
${I}_{ {\mathrm {\scriptstyle{ON}}}}$
of tree-type RFET with IB width (
${W}_{\text {IB}}$
) = 5 nm, NS space (
${S}_{\text {NS}}$
) = 25 nm, and HfO
₂
gate dielectric is separately demonstrated to improve by 44.6% and 60.2% for n- and p-type program, while in the case of SiO
₂
gate dielectric, suitable size parameters should be selected to obtain an improved ON-state current because of the tunneling strength. The underlying physical mechanism is discussed in detail.