High-Resistance State Reduction During Initial Cycles of AlOxNy-Based RRAM

In this work, the mechanism of reliability of high resistance state (HRS) in AlO
_x
N
_y
-based resistive random access memory (RRAM) has been studied. The Ta/AlO
_x
N
_y
/Pt devices with high quality of the Schottky contact in the Ta/AlO
_x
N
_y
interface show excellent HRS reliability and low power consumption characteristics. We propose that the resistive switching (RS) process is caused by the migration of oxygen ions in the AlO
_x
N
_y
-based RRAM device, and the quality of the metal–semiconductor Schottky contact directly determines HRS reliability in AlO
_x
N
_y
-based RRAM.