Analysis of the Ultrafast Transient Heat Transport in Sub 7-nm SOI FinFETs Technology Nodes Using Phonon Hydrodynamic Equation

During the last ten years, the miniaturization of nanoscale field-effect transistors (FETs) predicted by Moore's law has confronted an aggressive scaling down of the FET architecture (geometry and material) of nanoelectronics devices including phone mobile and computers. Built on thinner Fin body, FinFETs technologies are nonplanar devices based on scalable architecture suitable for the industry and nanomanufacturing methods. However, those emerging nanodevices suffer from thermal challenges related to self-heating effects and highest heat dissipation caused by thermal penetration. In this article, we report the nanoscale thermal transport in sub 7-nm FinFETs technology based on phonon hydrodynamic equation (PHE). Furthermore, we highlight feasible strategies to enhance the heat ability, which can improve the thermal stability of the nanodevice. This work presents a new physical picture of thermal performance optimizations in existing and future nanoelectronics devices.