Parameter Extraction and Compact Modeling of OTFTs From 150 K to 350 K

We target the parameter extraction from I-V and C-V characteristics and modeling of organic thin-film transistors (OTFTs) from 150 K up to 350 K (in two different manufacturing technologies). We also analyze the temperature dependence of the extracted parameters. For that purpose, we used a unified model and parameter extraction method at different temperatures adapted to OTFTs. We validated our model by comparison with experimental I-Vcharacteristics in both the linear and saturation regimes and C-V characteristics at different frequencies.