Bridge Transistors: A Study of Bridging Effects and Early Saturation Behaviors

This brief proposes the use of a bridge transistor as a means of achieving early saturation characteristics of drain current. To investigate the electrical properties of the bridge transistor, we introduce materials capable of forming homojunction [2,7-Dioctyl[1]benzothieno[3,2-b][1] benzothiophene (C8-BTBT)], heterojunction [dinaphtho[2,3-b:2’,3’-f]thieno[3,2 -b]thiophene (DNTT)], and Schottky junction (Au) as bridge layers, along with the C8-BTBT-based channel. Our findings reveal early saturation characteristics of drain current in bridge transistors with Schottky junction. Through contact resistance extraction and 2-D numerical simulation, we suggest that the early current saturation behavior is due to the additional contact resistance and depletion region.