Scattering by Stress-Induced Composition Modulation Around Edge Dislocations in GaN-Based Heterostructures

The stress-induced composition modulation around edge dislocations in GaN-based heterostructures causes deviation of the ground-state energy from the mean and thus affects electron transport. The stress-induced composition modulation around edge dislocations is described using a linear combination of two Gaussian distributions. The Boltzmann transport theory is used to develop a theoretical model for the composition modulation scattering. Taking the
${\text {Al}}_{{0.2}}\text {Ga}_{{0.8}}\text {N}/\text {AlN}/\text {GaN}$
heterostructure as a case study, this study delves into the impact of compositional distribution parameters on composition modulation scattering. Furthermore, the importance of composition modulation scattering in electron transport is evaluated by comparing the theoretical and experimental results.