A Simple Method for Series Resistance Extraction in Ultrascaled FinFETs Using Flicker Noise

A simple method to extract series resistance in nano-scaled CMOS devices is proposed in this brief. The method is based on the flicker noise measurement. After separating the trap-induced Lorentzian-shaped noise, the series resistance is derived from the gate voltage dependence of the normalized drain current noise. The proposed method only uses one single device, and thus can provide statistical information. To validate our method, experiments are conducted on industrial-grade 7 nm FinFET devices with different sizes and compared with other techniques in the literature. The proposed method needs no assumptions of mobility dependence on voltage and is applicable to short-channel devices in advanced technology nodes.