Annealing Ambient and Film Thickness Dependent NO2 Response and 1/f Noise Characteristics of IGZO Resistor-Type Gas Sensors

This study investigates the effects of post-deposition annealing (PDA) ambient and film thickness on the low-frequency noise (LFN) of IGZO thin film gas sensors. Various thicknesses of IGZO thin films are deposited and subjected to post-annealing in different ambient conditions. The oxygen vacancy-rich characteristics of the IGZO films lead to enhanced response and reduced 1/
${f}$
noise when post-annealed in a vacuum environment. The thinner IGZO material exhibits a greater response than the thicker film, albeit at the expense of more noise. Consequently, the signal-to-noise ratio (SNR) of the 30 nm IGZO film post-annealed in a vacuum environment is the largest.