A Hybrid Simulation Technique to Investigate Bias-Dependent Electron Transport and Self-Heating in AlGaN/GaN HFETs

This study investigates bias-dependent electron and thermal transport based on the electrothermal Monte Carlo (MC) simulation with velocity-field characteristics obtained by a self-consistent iterative method. A peak electron velocity of
$1.43\times 10^{{5}}$
m/s was obtained at a drain current of 534 A/m corresponding to a channel electron density of
$2.7\times 10^{{12}}$
cm−2. This behavior was found to be in good agreement with previously extracted experiments. A new 2DEG density versus electron velocity model based on polar optical phonon (POP) scattering and polarization Coulomb field (PCF) scattering is proposed to explain bias-dependent electron transport. The good agreement between experimental results and simulated current–voltage characteristics proves the accuracy of our MC simulation.