Temperature-Dependent Dynamic Ron of GaN E-HEMTs: The Impact of p-GaN Drain

In this article, the temperature-dependent dynamic ON-resistance (
${R}_{ \mathrm{ON}}$
) behaviors of GaN enhancement-mode (E-mode) high-electron-mobility transistors (E-HEMTs) with and without a p-GaN drain (PD) structure under both hard-switching (HS) and soft-switching (SS) have been systematically studied and analyzed, whereby the influences of temperature, OFF-state voltage stress, the PD structure, HS/SS, switching transients during HS, and ON-state current on dynamic
${R}_{ \mathrm{ON}}$
of GaN E-HEMTs have been revealed. It is found that higher temperature, higher OFF-state voltage stress, or larger ON-state current particularly under HS can facilitate the turn-on of the PD hetero-junction and enhance hole injection, which can effectively compensate the negative trapped charges and alleviate dynamic
${R}_{ \mathrm{ON}}$
degradation. The characterizations and analysis in this work can provide valuable insights into the mechanisms of superior dynamic performance in high-temperature and high-power applications.