An SOI LTIGBT With Self-Biased pMOS for Improved Short-Circuit Property and Reduced Turn-Off Loss

A novel silicon on insulator (SOI)-lateral trench insulated gate bipolar transistor (LTIGBT) featuring a self-biased pMOS (SBP), named SBP-LTIGBT, is proposed and investigated. The gate and drain of SBP are shortly connected with emitter electrode, and the source is connected with the P-buried, which introduces automatically turn-off and turn-on function. At the forward conduction state, the SBP is turned off when
${V}_{\text {GS,P}} > {V}_{\text {TH,P}}$
, and the SBP-LTIGBT shows the same electrical characteristics as conventional LTIGBT. The SBP is automatically turn-on with reduced saturation current when
${V}_{\text {GS,P}}< {V}_{\text {TH,P}}$
. At the switching state, the SBP is always turned on to accelerate the extraction of the excessive carriers; consequently, the turn-off loss
${E}_{\text {OFF}}$
is reduced. As a result, the tradeoff relationship between forward conduction voltage
${V}_{\text {ON}}$
and
${E}_{\text {OFF}}$
is largely improved. The short-circuit tolerance time (
${T}_{\text {SC}}{)}$
of the SBP-LTIGBT is
$10.5~\mu \text{s}$
, which is extended by 3.4, 2, and 1.4 times longer than that of LTIGBT with triple-RESURF (TR-LTIGBT), LTIGBT with double-RESURF (DR-LTIGBT), and conventional LTIGBT (C-LTIGBT), respectively. Furthermore, when
${V}_{\text {ON}}$
is 1.4 V,
${E}_{\text {OFF}}$
of the SBP-LTIGBT is 0.36 mJ/cm2, which is reduced by 73%, 60%, and 51% than that of C-LTIGBT, DR-LTIGBT, and TR-LTIGBT, respectively.