Transient Analysis of TSV Equivalent Circuit Considering Nonlinear MOS Capacitance Effects

An equivalent circuit model for the transient analysis of through-silicon vias (TSV) taking into account nonlinear metal-oxide-semiconductor effects is proposed. The model takes into account the nonlinear behavior of the doped silicon substrate in presence of the electric potential difference due to the transient voltage between the TSVs. The impact of time-variant capacitance between the via and the substrate on crosstalk and signal propagation is analyzed.