Simulation-Based Analysis and Modeling of Generated Single Event Transient Pulse Width

In this paper, the characterization of generated Single Event Transient (SET) pulse width in standard combinational cells, and an analytical model for the generated SET pulse width derived from the simulation results, are presented. The characterization was done with Spectre simulations, using a bias-dependent current source to inject SETs. Evaluation was done for standard cells designed in IHP’s 130 nm process. By analytical fitting of simulation results, a model for the width of generated SET pulse in terms of particle’s Linear Energy Transfer (LET), drive strength of target gate, drive strength of load gate, supply voltage and temperature was formulated. The proposed model is defined as the sum of multiple components, enabling to identify the contribution of individual parameters. It was shown that the average relative error of the proposed model with respect to the results from Spectre simulations is below 10 % for LET greater than 2 MeVcm
²
mg
^-1
, confirming the model's very good accuracy. The model could be used as a basis of an automated tool-flow for the analysis of SET effects in complex digital designs.