Theoretical Study on Epitaxial Growthof High-Quality III-Nitride on Graphene

III-nitride semiconductors hold massive significance due to their exceptional properties and applications. Despite so many decades-long efforts to attain the superior quality of III-nitride crystals, it remains a challenge. In this paper, we brought out a theoretical exploration for achieving high-quality III-nitride growth on graphene. Our study reveals that the growth of III-nitride on graphene surface holds immense promise, because of the hexagonal symmetry and also the inherently very small van der Waals interactions of graphene. Remarkably, our findings demonstrate a significant enhancement in the crystal quality of III-nitride as the number of bilayers increases. This investigation not only offers a new way for realizing high-quality III-nitride growth but also highlights the crucial role of graphene in increasing the material's quality and potential for diverse applications.