A Study of Deep Hole Etching In Mo&Dielectric Alterning Multilayer Structure

Molybdenum(Mo) is suitable for gate and inter-connection materials in integrated semiconductor with high melting point and low resistance. In this paper, we studied the inductively coupled plasma (ICP) of deep hole in Mo and dielectric multilayers structure. We found that the anisotropy etching ability of Cl
2
/NF
3
/Ar/C
4
F
6
is better than SF
6
/O
2
[1], NF
3
/O
2
, SF
6
/BCl
3
[2] and SF
6
/Cl
2
[3] which is suitable for deep hole etching of Mo and dielectric multilayers structure.