IGZO-TA2O5 Dual-Layer Cbrram: A Low Voltage and High Switching Ratio Storage Solution

This study explores the development and characteristic analysis of a Conductive Bridge Random Access Memory (CBRRAM) device utilizing an IGZO-Ta
2
O
5
dual-layer dielectric layer. The device demonstrates significant low threshold voltage, high ON/OFF switching ratio, and stable resistive switching characteristics, especially under a Set voltage less than 0.2V and a Reset voltage below -0.16V. These attributes render it exemplary in the field of non-volatile memory devices, showcasing immense potential and application prospects in high-performance computing and storage applications. The paper details the fabrication process, experimental design, and result analysis of the device [1]–[3], delving into the potential applications and challenges of this CBRRAM device in future storage and computing domains, particularly in areas like the Internet of Things, edge computing, and neuromorphic computing.