PBTI in Scaled Oxide Submicron Enhancement Mode High-K Gallium Nitride Transistors

PBTI for scaled E-Mode High-K GaN Transistors with thin gate-oxide insulator (T
ox
< 21.5Å) on 300mm diameter GaN-on-Si wafer is studied for the first time. PBTI degradation rate is shown to decrease over time to reach saturation. Study indicates prevalence of near-interface traps generated during stress. A phenomenological model is introduced to describe the saturating BTI degradation dynamics. Despite PBTI degradation with AVT saturating at ~350mV, the GaN MOSHEMT Figure of Merit gain is projected to be >~15X better than industry-standard Si LDMOS and pGaN HEMT or GaN JFET.