The First Investigation of Switching Lifetime on Parallel-Connected GaN Power Devices

GaN power device is increasingly becoming a solution to obtain high efficiency and high power density. Stability and reliability issues of dynamic ON-resistance for Parallel-connected GaN power devices are investigated for the first time. The “550-V-stress/100-V-monitor” scheme is used to identify the irreversible dynamic RON degradation. The time-resolved degradation for lifetime evaluation is conducted, where the parallel-connected devices exhibit a longer operation lifetime as compared with a single device configuration, due to the self-adjustment of the discharging current during the hard switching turn-ON transient.