Low Temperature Characterization and Modeling of Hot Carrier Injection in 14 nm Si FinFET

In this work, we report a non-monotonical temperature dependence of hot carrier injection (HCI) degradation for 14 nm Si FinFETs operated at low temperatures (LT). Multiple trap mechanisms are involved in the degradation. An HCI degradation model including multiple-particle single-particle and oxide traps was proposed to separate the effects from different traps as the stress time and temperature changes. As stress time increases, the dominant traps switch from single traps to oxide traps, and as temperature reduces, oxide traps and single-particle traps will make more contributions to the HCI degradation.