Accelerating Device-Circuit Self-Heating Simulations with Dynamic Time Evolution for GAAFET

An accelerated self-heating effect (SHE) simulation methodology is presented for 3nm Gate-all-around field effect transistors (GAAFETs), which, in combination with a compact thermal model (CTM) that takes into account the geometry dependence of the device, facilitates a prompt evaluation of SHE at the device-circuit level. The physics-based four-stage CTM is developed based on different thermal dissipation paths, and an agile particle swarm optimization (PSO) scheme is adopted to extract the thermal parameters of the CTM. A two-step SPICE SHE simulation scheme with a dynamic time evolution method (DTEM) is developed by incorporating the CTM into an open model interface (OMI) simulation framework. It is implemented to evaluate the influence of SHE on the electro-thermal characteristics of circuit units, significantly improving the SHE simulation efficiency compared to the conventional subcircuit approach without sacrificing simulation accuracy.