Improved Performance of Oppositely Doped CoreShell Junctionless Nanowire FET Using Gate Material Engineering

The impact of work function variation on Dual Material Gate Oppositely Doped Core-Shell Junctionless Nanowire FET (DMG-ODCS-JLNWFET) is explored in this paper. The variation in surface potential, electric field, band energy, drain current $(\mathrm {I_{D}})$, leakage current $(\mathrm{I}_{\mathrm{O}\mathrm{F}\mathrm{F}})$, subthreshold slope (SS), transconductance $(\mathrm{g}_{\mathrm{m}})$, and switching ratio $(\mathrm{I}_{\mathrm{O}\mathrm{N}}/\mathrm{I}_{\mathrm{O}\mathrm{F}\mathrm{F}})$ are analyzed. The performance of DMG-ODCS-JLNWFET is also compared with Single Material Gate (SMG) ODCS-JLNWFET. The results demonstrate that the proposed device shows significant advancements, boasting improvements of 18.9%, 73.7%, 26.8%, and 10.8% in $\mathrm {I_{D}}$, $\mathrm{I}_{\mathrm{O}\mathrm{F}\mathrm{F}}, \mathrm{g}_{\mathrm{m}}$, and SS respectively when compared to SMG-ODCS-JLNWFET. These noteworthy enhancements underscore the device’s exceptional suitability for both analog and digital applications within the confines of nano-scale dimensions.