WKB model of ferroelectric tunnel junctions for memory applications: voltage-dependent screening and electrostriction effects

In this article, the metal-ferroelectric-metal tunnel junctions (FTJ) are simulated to study the device’s performance. An enhanced model, based on the Wentzel-Kramers-Brillouin (WKB) approach, has been proposed. Its results are successfully verified with experimental data, the model features embedded $V -$dependent interfacial screening, magnetic spin degree of freedom, electric hysteresis, and electrostriction effect for the multi-domain barrier.