On-Voltage Designability by Triangular Barrier Engineering in Bipolar Silicon NIPIN-Selector for Asymmetric Bipolar RRAM

Non-linear threshold selectors are essential for leakage current mitigation in memristor crossbar arrays. In recent works, vertical $4\mathrm{~F}^{2}$ bipolar $\mathrm{n}^{+}/\mathrm{i}/\delta\mathrm{p}^{+}/\mathrm{i}/\mathrm{n}^{+}\mathrm{Si}(\mathrm{NIPIN})$ selector exhibiting $\sim 120\mathrm{mV}/$decade subthreshold slope has been demonstrated. Bipolar asymmetric resistive RAM(RRAM) requires a bipolar asymmetric selector. Here, we show the modulation of the intrinsic(i) region width to design the threshold voltage on either polarity. The voltage requirement is relatively reduced by excess voltage, reducing power consumption with asymmetric selectors for array operations.