I. Introduction
Nowadays, IGBT power modules are extensively utilized in various fields, particularly in high-power converter applications [1]. The thermal management of power electronic devices is crucial for ensuring reliable performance, especially at high power levels. One of the most important activities in thermal management and reliability improvement is acquiring the junction temperature information of the power module [2], [3]. Due to the difficulty of direct measurement, it is widely shared that the junction temperature can be predicted based on the thermal network models [4]. However, heat flows not only transfer vertically but also in 3D [5], and heat cross-coupling inevitably occurs as shown in Fig. 1. These heat interferences between chips will increase the temperatures rising [6].