Simulation Study on Temperature Field of Packaged High Power GaN Laser Diodes

GaN-based high power semiconductor optoelectronic devices have become the focus of research and the photoelectric performances have been greatly improved in recent years. However, it still encounters with many problems to be solved, including the aging, heat dissipation, reliability. This paper focuses on the packaging of 450mm InGaN/GaN high-power GaN laser diodes(LD). The temperature field of LD is simulated. LD structure mounted on Cu heat sink was established. The temperature of LD chip from room temperature to 500 °C is calculated and analyzed. The results show that heat diffuses along the surface. As the temperature rises further, the Cu heat sink nearby LD on the side already has a strong temperature field. The temperature field changes in the device during operation. In addition, the end face of LD is further studied. It is found that The closer the LD is, the greater the temperature gradient on the left and right sides of its symmetry axis is, and the peak value corresponds to the position of LD at the end face of the Cu heat sink. The temperature peaked at 424.4 °C at this position, but the temperature on both sides of the corresponding Cu heat sink drops to 171.4 °C. Although due to different surface areas lead to different heat dissipation capacity, the cooling effect of heat sink is obvious.